The Nanoelectronics Group (NeG), established in 2002 at the Electrical Engineering Department, University of British Columbia, is dedicated to studying nanoscale electronic devices. It is presently involved in research related to carbon nanotube (CN) physics and devices. The group's efforts are focused on predicting the performance of carbon nanotube field-effect transistors (CNFETs), via numerical simulations and compact modeling. Other UBC groups affiliated with NeG, such as the Molecular Mechatronics Lab, are involved with fabrication and characterization of related devices.
CARBON NANOTUBES AND TRANSISTORS
Carbon nanotubes are rolled up sheets of graphite that may exhibit metallic or semiconducting properties. CNs can also be classified as single-walled or multi-walled, where the former is typically used in transistor research. More information on nanotubes can be found by clicking here.
Nanoscale transistors fashioned with carbon nanotubes as channels for carriers are an exciting possibility. Transport is essentially one-dimensional, and studies have shown that there is very little scattering. Thus, the drain current is primarily modulated by the channel potential (often by Schottky-barrier potential profiles at the source and drain ends of the nanotube), rather than variation of the conduction properties of the channel. Present experimental devices are planar in nature, but coaxial structures offer better opportunities for effective coupling between the gate and the channel. Some groups have reported electrolyte-gated devices, while others are investigating double-gated devices, both of which are a closer approximation to the coaxial geometry. Please refer to the publications page for our group's latest work on modeling CNFETs.
Prof. David L. Pulfrey
McLeod Building, Room 249
Electrical and Computer Engineering
University of British Columbia
2356 Main Mall, Vancouver, BC
Canada -- V6T1Z4
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